Allgemein
| Basis-Teilenummer | NJW3281 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 800mA, 8A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | NJW3281 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 800mA, 8A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 3A, 5V |
| Power - Max | 200 W |
| Frequency - Transition | 30MHz |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P-3L |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
|---|