Allgemein
| Basis-Teilenummer | NJL4281 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN + Diode (Isolated) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 8A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | NJL4281 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN + Diode (Isolated) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 8A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5A, 5V |
| Power - Max | 230 W |
| Frequency - Transition | 35MHz |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-5 |
| Hersteller-Gehäuse | TO-264 |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
|---|