Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 13mOhm @ 6A, 10V |
|---|---|
| FET Feature | Current Sensing |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 6 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 24 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Max. Verlustleistung | 1.4W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-DFN |
| Hersteller-Gehäuse | 4-PLLP (6.2x5.2) |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|