Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 35 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 1.9V @ 100µA |
| Drain-Source-Spannung | 59 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Max. Verlustleistung | 1.69W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SOT-223 (TO-261) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|