Allgemein
| Basis-Teilenummer | MPSA12 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | MPSA12 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA, 5V |
| Power - Max | 625 mW |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Hersteller-Gehäuse | TO-92 (TO-226) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|