Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1A, 4V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Hersteller-Gehäuse | 5-MCPH |
| Betriebstemperatur | 150°C (TJ) |
|---|