Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | HGTD1N120 |
|---|---|
| Gate Charge | 14 nC |
| IGBT Type | NPT |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Switching Energy | 70µJ (on), 90µJ (off) |
| Td (on/off) @ 25°C | 15ns/67ns |
| Test Condition | 960V, 1A, 82Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 5.3 A |
| Current - Collector Pulsed (Icm) | 6 A |
| Power - Max | 60 W |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | TO-252AA |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|