Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | HGT1S10 |
|---|---|
| Gate Charge | 100 nC |
| IGBT Type | NPT |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Td (on/off) @ 25°C | 23ns/165ns |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | D²PAK (TO-263) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|