Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 550mOhm @ 650mA, 10V |
|---|---|
| Basis-Teilenummer | FQS4900 |
| Konfiguration | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 5V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | QFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.95V @ 20mA |
| Drain-Source-Spannung | 60V, 300V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3A, 300mA |
| Power - Max | 2W |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOIC |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|