Allgemein
| Basis-Teilenummer | FPN6 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | FPN6 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Power - Max | 1 W |
| Frequency - Transition | 75MHz |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Hersteller-Gehäuse | TO-226 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|