Allgemein
| Basis-Teilenummer | FJP535 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 800mA, 2.5A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | FJP535 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 800mA, 2.5A |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7 @ 2.5A, 2V |
| Power - Max | 50 W |
| Frequency - Transition | 4MHz |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220-3 |