Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | FJN430 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Hersteller-Gehäuse | TO-92-3 |