Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 275 nC |
|---|---|
| IGBT Type | NPT and Trench |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 1.2 µs |
| Td (on/off) @ 25°C | 140ns/630ns |
| Test Condition | 600V, 60A, 51Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 180 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Hersteller-Gehäuse | TO-264-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|