Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 119 nC |
|---|---|
| IGBT Type | Field Stop |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 42 ns |
| Switching Energy | 820µJ (on), 260µJ (off) |
| Td (on/off) @ 25°C | 12ns/92ns |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 349 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3PN |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|