Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 200 nC |
|---|---|
| IGBT Type | NPT and Trench |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 350 ns |
| Switching Energy | 4.1mJ (on), 960µJ (off) |
| Td (on/off) @ 25°C | 50ns/190ns |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 50A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 312 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|