Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 120 nC |
|---|---|
| IGBT Type | NPT and Trench |
| Eingangstyp | Standard |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 330 ns |
| Switching Energy | 3mJ (on), 600µJ (off) |
| Td (on/off) @ 25°C | 15ns/160ns |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 186 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|