Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 462mOhm @ 300mA, 4.5V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 15 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +5.5V, -0.3V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-UFBGA, WLCSP |
| Hersteller-Gehäuse | 4-WLCSP (0.96x0.96) |
| Betriebstemperatur | -55°C~125°C(TJ) |
|---|