Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.9A, 10V |
|---|---|
| Konfiguration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 30V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | PowerTrench® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Power - Max | 900mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOIC |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |