Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 366mOhm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 100 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Serie | UniFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 220 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta), 7A (Tc) |
| Max. Verlustleistung | 2.1W (Ta), 42W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerWDFN |
| Hersteller-Gehäuse | 8-MLP (3.3x3.3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|