Allgemein
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Eingangstyp | Inverting |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 15ns, 10ns |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Eingangstyp | Inverting |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 15ns, 10ns |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
|---|---|
| High Side Voltage - Max (Bootstrap) | 600 V |
| Versorgungsspannung | 10V ~ 20V |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Qualification | AEC-Q100 |