Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 3A, 4.5V |
|---|---|
| Basis-Teilenummer | EFC6605 |
| Konfiguration | 2 N-Channel |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 19.8nC @ 4.5V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Power - Max | 1.6W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, No Lead |
| Hersteller-Gehäuse | 6-EFCP (1.9x1.46) |
| Betriebstemperatur | 150°C |
|---|