Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V |
| Hersteller | onsemi |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-Source-Spannung | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max. Verlustleistung | 250mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SC-59-3/CP3 |
| Betriebstemperatur | 150°C (TJ) |
|---|