Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 20 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Max. Verlustleistung | 2W (Ta), 20W (Tc) |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-220FI(LS) |
| Betriebstemperatur | 150°C(TJ) |
|---|