Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 13Ohm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 30 V |
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±35V |
| Drain-Source-Spannung | 1500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max. Verlustleistung | 3W (Ta), 50W (Tc) |
| Gehäuse | Tray |
|---|---|
| Package / Case | TO-3P-3 Full Pack |
| Hersteller-Gehäuse | TO-3PML |
| Betriebstemperatur | 150°C (TJ) |
|---|