Allgemein
| Hersteller | onsemi |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 20mA |
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Power - Max | 600 mW |
| Frequency - Transition | 250 MHz |
Mechanisch
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Hersteller-Gehäuse | 3-MP |