Allgemein
| Basis-Teilenummer | 2N310 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 2N310 |
|---|---|
| Hersteller | onsemi |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA,1V |
| Power - Max | 800 mW |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Hersteller-Gehäuse | TO-39 |