Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 117mOhm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 147 pF @ 10 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Max. Verlustleistung | 830mW (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23 (TO-236AB) |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
|---|