Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Max. Verlustleistung | 530mW (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-75, SOT-416 |
| Hersteller-Gehäuse | SC-75 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|