Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 294mOhm @ 2.6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 657 pF @ 30 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Max. Verlustleistung | 50W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-VDFN Exposed Pad |
| Hersteller-Gehäuse | DFN3333-8 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|