Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Max. Verlustleistung | 485mW (Ta), 6.25W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-UFDFN Exposed Pad |
| Hersteller-Gehäuse | 6-HUSON (2x2) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|