Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 6 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-Source-Spannung | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Max. Verlustleistung | 556mW (Ta), 12.5W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-XFBGA, WLCSP |
| Hersteller-Gehäuse | 6-WLCSP (1.48x0.98) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|