Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±13V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Max. Verlustleistung | 1.8W (Ta), 8.3W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SC-73 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|