Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | PBRN113 |
|---|---|
| Hersteller | NXP USA Inc. |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V |
| Power - Max | 700 mW |
| Gehäuse | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Hersteller-Gehäuse | TO-92-3 |