Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 69.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9150 pF @ 25 V |
| Hersteller | NXP USA Inc. |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Max. Verlustleistung | 234W (Tc) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
|---|---|
| Hersteller-Gehäuse | I2PAK |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|