Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7124 pF @ 25 V |
| Hersteller | NXP USA Inc. |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Max. Verlustleistung | 254W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220AB |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|