Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 9.6 V |
| Hersteller | NXP USA Inc. |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 600mV @ 1mA (Typ) |
| Drain-Source-Spannung | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.52A (Ta) |
| Max. Verlustleistung | 417mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | SC-74, SOT-457 |
| Hersteller-Gehäuse | 6-TSOP |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|