Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 2.8V |
|---|---|
| Basis-Teilenummer | BS10 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| Hersteller | NXP USA Inc. |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Hersteller-Gehäuse | TO-92-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|