Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
|---|---|
| Basis-Teilenummer | 2N70 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
| Hersteller | NXP USA Inc. |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | TrenchMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Max. Verlustleistung | 830mW (Ta) |
| Gehäuse | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Hersteller-Gehäuse | TO-92-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|