Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8161 pF @ 40 V |
| Hersteller | NXP Semiconductors |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Max. Verlustleistung | 306W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220AB |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|