Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 20mA, 5A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 20mA, 5A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 3V |
| Power - Max | 65 W |
| Frequency - Transition | 4MHz |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220-3 |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
|---|