Allgemein
| Capacitance @ Vr, F | 65pF @ 0V, 1MHz |
|---|---|
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Avalanche |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 65pF @ 0V, 1MHz |
|---|---|
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 2 A |
| Current - Average Rectified (Io) | 1.6A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Bag |
|---|---|
| Package / Case | SOD-57, Axial |
| Hersteller-Gehäuse | SOD-57 |
| Operating Temperature - Junction | -65°C ~ 175°C |
|---|