Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +15V, -300mV |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-237AA |
| Hersteller-Gehäuse | TO-237 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|