Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 600Ohm @ 0A, 10V |
|---|---|
| FET Feature | Standard |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V |
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 10A |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Max. Verlustleistung | 800mW (Tc) |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-72-3 |
| Hersteller-Gehäuse | TO-72 |
| Betriebstemperatur | 175°C (TJ) |
|---|