Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 30mA, 300mA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 30mA, 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 650 mW |
| Frequency - Transition | 350MHz |
| Gehäuse | Bag |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| Hersteller-Gehäuse | 14-DIP |
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
|---|