Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 4.5A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 4.5A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2.25 @ 4.5A, 5V |
| Power - Max | 125 W |
| Frequency - Transition | 7MHz |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-218-3 |
| Hersteller-Gehäuse | TO-218 |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
|---|