Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 600mA, 3A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 600mA, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
|---|---|
| Current - Collector (Ic) (Max) | 12 A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 400mA, 5V |
| Power - Max | 2.5 W |
| Frequency - Transition | 15MHz |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P |
| Betriebstemperatur | 150°C (TJ) |
|---|