Allgemein
| FET Type | N-Channel |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 15 V |
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| FET Type | N-Channel |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 15 V |
| Hersteller | NTE Electronics, Inc |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50mA (Tj) |
| Max. Verlustleistung | 360mW (Ta), 1.2mW (Tc) |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Hersteller-Gehäuse | TO-72 |
| Betriebstemperatur | -65°C~175°C(TJ) |
|---|