Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA, 1V |
| Power - Max | 2.1 W |
| Frequency - Transition | 50MHz |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-202 Long Tab |
| Hersteller-Gehäuse | TO-202 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|