Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bag |
| Teilestatus | Aktiv |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 100mA, 1A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Verpackung | Bag |
| Teilestatus | Aktiv |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 36 @ 1A, 0V |
| Power - Max | 6 W |
| Package / Case | TO-213AA, TO-66-2 |
|---|---|
| Hersteller-Gehäuse | TO-66 |
| Betriebstemperatur | 90°C (TJ) |
|---|