Allgemein
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Hersteller | NTE Electronics, Inc |
|---|---|
| Montageart | Through Hole |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
| Power - Max | 1 W |
| Gehäuse | Bag |
|---|---|
| Package / Case | TO-237AA |
| Hersteller-Gehäuse | TO-237 |